BusBabel

schneider Sepam S40

Sepam S40

Importata da documento

Mappa registri Modbus

200 registri

LenScalaEndian
2
Binary time (year)
Scrivere in blocco di 4 parole (0002-0005) con FC16. Formato definito nel capitolo 'Time-tagging of events' del manuale originale, non trascritto in questa estrazione.
binary_time_year3uint1611R/W
3
Binary time (months + days)
Formato definito nel capitolo 'Time-tagging of events', non trascritto.
binary_time_months_days3uint1611R
4
Binary time (hours + minutes)
Formato definito nel capitolo 'Time-tagging of events', non trascritto.
binary_time_hours_minutes3uint1611R
5
Binary time (milliseconds)
Formato definito nel capitolo 'Time-tagging of events', non trascritto.
binary_time_milliseconds3uint1611R
6
Manufacturer identification
Valore fisso 0100h.
manufacturer_identification3uint1611R
7
Equipment identification
Valore fisso 0.
equipment_identification3uint1611R
8
Marking + equipment type
Duplica il valore del registro 02E2 (zona Configuration).
marking_equipment_type3uint1611R
9
Modbus version
Non gestito (valore fisso 0).
modbus_version3uint1611R
10
Application version
DIM=2 (000A/000B). MSB parola 2 = indice maggiore, LSB parola 2 = indice minore.
application_version3uint3221R
12
Sepam check-word (idem 0100)
Duplica il valore del registro 0100 (Sepam check-word, formato X, vedi zona Status).
sepam_check_word_idem_01003bitfield11R
13
Extension word
Non gestito (valore fisso 0).
extension_word3uint1611R
14
Command
Non gestito, inizializzato a 0.
command3uint1611R/W
15
Extension address
Valore fisso 02CCh (indirizzo della zona Configuration).
extension_address3uint1611R
64
Event zone 1 - Exchange word
Lettura in blocco di 33 parole (0040-0060) con FC3, scrittura della sola parola di scambio con FC6/16.
event_zone_1_exchange_word3uint1611R/W
65
Event zone 1 - Event n.1
DIM=8. Formato del singolo evento con marcatura temporale definito nel capitolo 'Time-tagging of events' del manuale originale, non trascritto in questa estrazione.
event_zone_1_event_n_13string1R
73
Event zone 1 - Event n.2
DIM=8. Formato del singolo evento con marcatura temporale definito nel capitolo 'Time-tagging of events' del manuale originale, non trascritto in questa estrazione.
event_zone_1_event_n_23string1R
81
Event zone 1 - Event n.3
DIM=8. Formato del singolo evento con marcatura temporale definito nel capitolo 'Time-tagging of events' del manuale originale, non trascritto in questa estrazione.
event_zone_1_event_n_33string1R
89
Event zone 1 - Event n.4
DIM=8. Formato del singolo evento con marcatura temporale definito nel capitolo 'Time-tagging of events' del manuale originale, non trascritto in questa estrazione.
event_zone_1_event_n_43string1R
112
Event zone 2 - Exchange word
Lettura in blocco di 33 parole (0070-0090) con FC3, scrittura della sola parola di scambio con FC6/16.
event_zone_2_exchange_word3uint1611R/W
113
Event zone 2 - Event n.1
DIM=8. Stesso formato di Event zone 1, non trascritto in questa estrazione.
event_zone_2_event_n_13string1R
121
Event zone 2 - Event n.2
DIM=8. Stesso formato di Event zone 1, non trascritto in questa estrazione.
event_zone_2_event_n_23string1R
129
Event zone 2 - Event n.3
DIM=8. Stesso formato di Event zone 1, non trascritto in questa estrazione.
event_zone_2_event_n_33string1R
137
Event zone 2 - Event n.4
DIM=8. Stesso formato di Event zone 1, non trascritto in questa estrazione.
event_zone_2_event_n_43string1R
240
TC1-TC16
Ordini di telecomando (formato B), leggibile/scrivibile a parola (FC3/4/6/16) o a singolo bit (FC1/2/5/15, indirizzo bit 0F00-0F0F). bit0=Tripping; bit1=Closing; bit2=Switching to setting group A; bit3=Switching to setting group B; bit4=Sepam reset; bit5=Peak demand current zero reset; bit6=Inhibit thermal protection; bit7=Inhibit disturbance recording triggering; bit8=Confirm disturbance recording triggering; bit9=Manual disturbance recording triggering; bit10=Enable recloser; bit11=Disable recloser; bit12=Confirm thermal protection; bit13=Reset undercurrent protection; bit14=S-LAN communication monitoring; bit15=S-LAN communication monitoring inhibition. Applicabilita' per singolo modello Sepam (S40/S41/.../T52) non riportata: varia per bit, vedi manuale originale tabella pag.174.
tc1_tc163bitfield11R/W
241
STC1-STC16
Bit di selezione (modalita' SBO - select before operate) corrispondenti 1:1 ai bit di TC1-TC16 (registro 00F0). Formato B, indirizzo bit 0F10-0F1F.
stc1_stc163bitfield11R/W
242
TC17-TC32
Formato B, indirizzo bit 0F20-0F2F. bit0=Inhibit TS126 (Inductive) and TS127 (Capacitive); bit1=Confirm TS126 (Inductive) and TS127 (Capacitive); bit2..bit15=Reserved. TC19-TC32: Reserved (dato dal documento come riga unica "19-32 Reserved").
tc17_tc323bitfield11R/W
243
STC17-STC32
Bit di selezione (modalita' SBO) corrispondenti 1:1 ai bit di TC17-TC32 (registro 00F2). Formato B, indirizzo bit 0F30-0F3F.
stc17_stc323bitfield11R/W
256
Sepam check-word
Formato X. bit15=evento presente in zona eventi 1; bit14=Sepam in stato "data loss" zona eventi 1; bit13=Sepam non sincrono; bit12=Sepam ora non corretta; bit11=eventi presenti in zona eventi 2; bit10=Sepam in stato "data loss" zona eventi 2; bit9=guasto maggiore Sepam; bit8=guasto parziale Sepam; bit7=gruppo di impostazioni A in servizio; bit6=gruppo di impostazioni B in servizio; bit1=Sepam in modalita' impostazione locale; bit0,2,3,4,5=riservati. I cambi di stato dei bit 1,6,7,8,10,12,13,14 generano un evento con marcatura temporale.
sepam_check_word3bitfield11R
257
TS1-TS16
Formato B, word 0101, indirizzo bit 1010-101f. bit0=Protection 50/51 unit 1; bit1=Protection 50/51 unit 2; bit2=Protection 50/51 unit 3; bit3=Protection 50/51 unit 4; bit4=Protection 50N/51N unit 1; bit5=Protection 50N/51N unit 2; bit6=Protection 50N/51N unit 3; bit7=Protection 50N/51N unit 4; bit8=Protection 49 RMS alarm set point; bit9=Protection 49 RMS tripping set point; bit10=Protection 37; bit11=Protection 46 unit 1; bit12=Protection 46 unit 2; bit13=Protection 48/51LR/14 (locked rotor); bit14=Protection 48/51LR/14 (rotor locking on start); bit15=Protection 48/51LR/14 (excessive starting time). Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts1_ts163bitfield11R
258
TS17-TS32
Formato B, word 0102, indirizzo bit 1020-102f. bit0=Protection 27D unit 1; bit1=Protection 27D unit 2; bit2=Protection 27/27S unit 1; bit3=Protection 27/27S unit 2; bit4=Protection 27R; bit5=Protection 59 unit 1; bit6=Protection 59 unit 2; bit7=Protection 59N unit 1; bit8=Protection 59N unit 2; bit9=Protection 81H unit 1; bit10=Protection 81H unit 2; bit11=Protection 81L unit 1; bit12=Protection 81L unit 2; bit13=Protection 81L unit 3; bit14=Protection 81L unit 4; bit15=Protection 66. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts17_ts323bitfield11R
259
TS33-TS48
Formato B, word 0103, indirizzo bit 1030-103f. bit0=Protection 67 unit 1; bit1=Protection 67 unit 2; bit2=Protection 67N unit 1; bit3=Protection 67N unit 2; bit4=Protection 47; bit5=Protection 32P; bit6=Protection 50BF; bit7=Protection 32Q; bit8=Protection 51V; bit9=TC fault; bit10=TP Phase fault; bit11=TP V0 fault; bit12=Reserved; bit13=Reserved; bit14=Reserved; bit15=Reserved. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts33_ts483bitfield11R
260
TS49-TS64
Formato B, word 0104, indirizzo bit 1040-104f. bit0=Reserved; bit1=Reserved; bit2=Reserved; bit3=Reserved; bit4=Reserved; bit5=Reserved; bit6=Reserved; bit7=Reserved; bit8=Reserved; bit9=Reserved; bit10=Reserved; bit11=Reserved; bit12=Reserved; bit13=Reserved; bit14=Reserved; bit15=Reserved. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts49_ts643bitfield11R
261
TS65-TS80
Formato B, word 0105, indirizzo bit 1050-105f. bit0=Protection 38/49T module 1 alarm set point sensor 1; bit1=Protection 38/49T module 1 tripping set point sensor 1; bit2=Protection 38/49T module 1 alarm set point sensor 2; bit3=Protection 38/49T module 1 tripping set point sensor 2; bit4=Protection 38/49T module 1 alarm set point sensor 3; bit5=Protection 38/49T module 1 tripping set point sensor 3; bit6=Protection 38/49T module 1 alarm set point sensor 4; bit7=Protection 38/49T module 1 tripping set point sensor 4; bit8=Protection 38/49T module 1 alarm set point sensor 5; bit9=Protection 38/49T module 1 tripping set point sensor 5; bit10=Protection 38/49T module 1 alarm set point sensor 6; bit11=Protection 38/49T module 1 tripping set point sensor 6; bit12=Protection 38/49T module 1 alarm set point sensor 7; bit13=Protection 38/49T module 1 tripping set point sensor 7; bit14=Protection 38/49T module 1 alarm set point sensor 8; bit15=Protection 38/49T module 1 tripping set point sensor 8. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts65_ts803bitfield11R
262
TS81-TS96
Formato B, word 0106, indirizzo bit 1060-106f. bit0=Protection 38/49T module 2 alarm set point sensor 1; bit1=Protection 38/49T module 2 tripping set point sensor 1; bit2=Protection 38/49T module 2 alarm set point sensor 2; bit3=Protection 38/49T module 2 tripping set point sensor 2; bit4=Protection 38/49T module 2 alarm set point sensor 3; bit5=Protection 38/49T module 2 tripping set point sensor 3; bit6=Protection 38/49T module 2 alarm set point sensor 4; bit7=Protection 38/49T module 2 tripping set point sensor 4; bit8=Protection 38/49T module 2 alarm set point sensor 5; bit9=Protection 38/49T module 2 tripping set point sensor 5; bit10=Protection 38/49T module 2 alarm set point sensor 6; bit11=Protection 38/49T module 2 tripping set point sensor 6; bit12=Protection 38/49T module 2 alarm set point sensor 7; bit13=Protection 38/49T module 2 tripping set point sensor 7; bit14=Protection 38/49T module 2 alarm set point sensor 8; bit15=Protection 38/49T module 2 tripping set point sensor 8. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts81_ts963bitfield11R
263
TS97-TS112
Formato B, word 0107, indirizzo bit 1070-107f. bit0=Recloser in service; bit1=Recloser in progress; bit2=Recloser final trip; bit3=Recloser successful reclosing; bit4=Send blocking input 1; bit5=Remote setting inhibited; bit6=Remote control inhibited; bit7=Sepam not reset after fault; bit8=TC/ position discrepancy; bit9=Matching fault or Trip Circuit Supervision; bit10=Disturbance recording stored; bit11=Control fault; bit12=Disturbance recording inhibited; bit13=Thermal protection inhibited; bit14=MET148-1 module sensor fault; bit15=MET148-2 module sensor fault. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts97_ts1123bitfield11R
264
TS113-TS128
Formato B, word 0108, indirizzo bit 1080-108f. bit0=Thermistor tripping; bit1=Thermistor alarm; bit2=External tripping 1; bit3=External tripping 2; bit4=External tripping 3; bit5=Buchholz tripping; bit6=Thermostat tripping; bit7=Pressure tripping; bit8=Buchholz alarm; bit9=Thermostat alarm; bit10=Pressure alarm; bit11=SF6 alarm; bit12=Recloser ready; bit13=Inductive (TC17 puo' inibire questo TS); bit14=Capacitive (TC17 puo' inibire questo TS); bit15=Phase inverse rotation. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts113_ts1283bitfield11R
265
TS129-TS144
Formato B, word 0109, indirizzo bit 1090-109f. bit0=Send blocking input 2; bit1=Tripping due to protection; bit2=S-LAN communication monitoring enabled; bit3=46BC protection (solo applicazioni S5X e T5X); bit4=Reserved; bit5=Reserved; bit6=Reserved; bit7=Reserved; bit8=Reserved; bit9=Reserved; bit10=Reserved; bit11=Reserved; bit12=Reserved; bit13=Reserved; bit14=Reserved; bit15=Reserved. Applicabilita' per singolo modello Sepam non riportata: dato non ricostruibile con certezza dall'estrazione del documento (vedi nota di testa dello script).
ts129_ts1443bitfield11R
267
Logic inputs status
bit0=I11, bit1=I12, bit2=I13, bit3=I14, bit4=I21, bit5=I22, bit6=I23, bit7=I24, bit8=I25, bit9=I26, bit10..15=riservati. Mappatura bit da verificare manualmente sul PDF originale pag.165 (allineamento colonne ambiguo nell'estrazione testo).
logic_inputs_status3bitfield11R
268
Logic equation bits status
bit0=V1...bit7=V8, bit8=V9, bit9=V10, bit10=V_TRIPCB, bit11=V_CLOSECB, bit12=V_INHIBCLOSE, bit13=V_FLAGREC, bit14-15=riservati.
logic_equation_bits_status3bitfield11R
269
Logic outputs status
bit0=O1, bit1=O2, bit2=O3, bit3=O4, bit4=O11, bit5=O12, bit6=O13, bit7=O14, bit8-15=riservati.
logic_outputs_status3bitfield11R
270
LED status
bit0=LD (led rossa, Sepam non disponibile), bit1=L1...bit9=L9, bit10-15=riservati.
led_status3bitfield11R
271
Analog output
Formato 16S. Controllo remoto dell'uscita analogica del modulo MSA141; range utile definito dai parametri 'min. value'/'max. value' dell'uscita analogica. Non influenzato dall'inibizione dei telecomandi.
analog_output3int1611R/W
275
Phase current I1 (x1)
phase_current_i1_x13uint16110AR
276
Phase current I2 (x1)
phase_current_i2_x13uint16110AR
277
Phase current I3 (x1)
phase_current_i3_x13uint16110AR
278
Residual current I0 Sum (x1)
residual_current_i0_sum_x13uint16110AR
279
Residual current measured (x1)
residual_current_measured_x13uint16110AR
280
Average phase current Im1 (x1)
average_phase_current_im1_x13uint16110AR
281
Average phase current Im2 (x1)
average_phase_current_im2_x13uint16110AR
282
Average phase current Im3 (x1)
average_phase_current_im3_x13uint16110AR
283
Peak demand phase current IM1 (x1)
peak_demand_phase_current_im1_x13uint16110AR
284
Peak demand phase current IM2 (x1)
peak_demand_phase_current_im2_x13uint16110AR
285
Peak demand phase current IM3 (x1)
peak_demand_phase_current_im3_x13uint16110AR
286
Phase-to-phase voltage U21 (x1)
phase_to_phase_voltage_u21_x13uint1611VR
287
Phase-to-phase voltage U32 (x1)
phase_to_phase_voltage_u32_x13uint1611VR
288
Phase-to-phase voltage U13 (x1)
phase_to_phase_voltage_u13_x13uint1611VR
289
Phase-to-neutral voltage V1 (x1)
phase_to_neutral_voltage_v1_x13uint1611VR
290
Phase-to-neutral voltage V2 (x1)
phase_to_neutral_voltage_v2_x13uint1611VR
291
Phase-to-neutral voltage V3 (x1)
phase_to_neutral_voltage_v3_x13uint1611VR
292
Residual voltage V0 (x1)
residual_voltage_v0_x13uint1611VR
293
Positive sequence voltage Vd (x1)
positive_sequence_voltage_vd_x13uint1611VR
294
Negative sequence voltage Vi (x1)
negative_sequence_voltage_vi_x13uint1611VR
295
Frequency
frequency3uint161100HzR
296
Active power P (x1)
active_power_p_x13int1611kWR
297
Reactive power Q (x1)
reactive_power_q_x13int1611kvarR
298
Apparent power S (x1)
apparent_power_s_x13int1611kVAR
299
Peak demand active power Pm (x1)
peak_demand_active_power_pm_x13int1611kWR
300
Peak demand reactive power Qm (x1)
peak_demand_reactive_power_qm_x13int1611kvarR
301
Power factor cos phi
power_factor_cos_phi3int161100R
302
Positive active energy Ea+ (x1)
positive_active_energy_ea_x13uint3220.01kWhR
304
Negative active energy Ea- (x1)
negative_active_energy_ea_x13uint3220.01kWhR
306
Positive reactive energy Er+ (x1)
positive_reactive_energy_er_x13uint3220.01kvarhR
308
Negative reactive energy Er- (x1)
negative_reactive_energy_er_x13uint3220.01kvarhR
310
Phase current I1 (x10)
phase_current_i1_x103uint1611AR
311
Phase current I2 (x10)
phase_current_i2_x103uint1611AR
312
Phase current I3 (x10)
phase_current_i3_x103uint1611AR
313
Residual current I0 Sum (x10)
residual_current_i0_sum_x103uint1611AR
314
Residual current measured (x10)
residual_current_measured_x103uint1611AR
315
Average phase current Im1 (x10)
average_phase_current_im1_x103uint1611AR
316
Average phase current Im2 (x10)
average_phase_current_im2_x103uint1611AR
317
Average phase current Im3 (x10)
average_phase_current_im3_x103uint1611AR
318
Peak demand phase current IM1 (x10)
peak_demand_phase_current_im1_x103uint1611AR
319
Peak demand phase current IM2 (x10)
peak_demand_phase_current_im2_x103uint1611AR
320
Peak demand phase current IM3 (x10)
peak_demand_phase_current_im3_x103uint1611AR
321
Phase-to-phase voltage U21 (x10)
phase_to_phase_voltage_u21_x103uint1610.1VR
322
Phase-to-phase voltage U32 (x10)
phase_to_phase_voltage_u32_x103uint1610.1VR
323
Phase-to-phase voltage U13 (x10)
phase_to_phase_voltage_u13_x103uint1610.1VR
324
Phase-to-neutral voltage V1 (x10)
phase_to_neutral_voltage_v1_x103uint1610.1VR
325
Phase-to-neutral voltage V2 (x10)
phase_to_neutral_voltage_v2_x103uint1610.1VR
326
Phase-to-neutral voltage V3 (x10)
phase_to_neutral_voltage_v3_x103uint1610.1VR
327
Residual voltage V0 (x10)
residual_voltage_v0_x103uint1610.1VR
328
Positive sequence voltage Vd (x10)
positive_sequence_voltage_vd_x103uint1610.1VR
329
Negative sequence voltage Vi (x10)
negative_sequence_voltage_vi_x103uint1610.1VR
330
Frequency (x10)
frequency_x103uint161100HzR
331
Active power P (x100)
active_power_p_x1003int1610.01kWR
332
Reactive power Q (x100)
reactive_power_q_x1003int1610.01kvarR
333
Apparent power S (x100)
apparent_power_s_x1003int1610.01kVAR
334
Peak demand active power Pm (x100)
peak_demand_active_power_pm_x1003int1610.01kWR
335
Peak demand reactive power Qm (x100)
peak_demand_reactive_power_qm_x1003int1610.01kvarR
336
Power factor cos phi (x10)
power_factor_cos_phi_x103int161100R
337
Positive active energy Ea+ (x1) [x10 zone]
positive_active_energy_ea_x1_x10_zone3uint3220.01kWhR
339
Negative active energy Ea- (x1) [x10 zone]
Nome campo parzialmente in francese nell'estrazione originale ('Energie active negative'); interpretato come 'Negative active energy' per coerenza con la zona x1.
negative_active_energy_ea_x1_x10_zone3uint3220.01kWhR
341
Positive reactive energy Er+ (x1) [x10 zone]
positive_reactive_energy_er_x1_x10_zone3uint3220.01kvarhR
343
Negative reactive energy Er- (x1) [x10 zone]
negative_reactive_energy_er_x1_x10_zone3uint3220.01kvarhR
345
Peak demand Ii/Id
Colonna Access estratta come 'L', quasi certamente refuso di estrazione per 'R' (Read): verificare sul PDF originale pag.167.
peak_demand_ii_id3uint1611%R
346
Last tripping current Itrip1
last_tripping_current_itrip13uint1610.1AR
347
Last tripping current Itrip2
last_tripping_current_itrip23uint1610.1AR
348
Last tripping current Itrip3
last_tripping_current_itrip33uint1610.1AR
350
Cumulative breaking current
cumulative_breaking_current3uint1611kA^2R
351
Number of operations
number_of_operations3uint1611R
352
Operating time
operating_time3uint1611msR
353
Charging time
charging_time3uint1611msR
354
Running hours counter / operation time
running_hours_counter_operation_time3uint1611hR
356
Thermal capacity used
thermal_capacity_used3uint1611%R
357
Time before tripping
time_before_tripping3uint1611minR
358
Time before closing
time_before_closing3uint1611minR
359
Negative sequence / unbalance
negative_sequence_unbalance3uint1611% IbR
360
Starting time / overload
starting_time_overload3uint16110sR
361
Starting current / overload
starting_current_overload3uint1611AR
362
Start inhibit time delay
start_inhibit_time_delay3uint1611minR
363
Number of starts allowed
number_of_starts_allowed3uint1611R
364
Temperature 1
temperature_13int1611°CR
365
Temperature 2
temperature_23int1611°CR
366
Temperature 3
temperature_33int1611°CR
367
Temperature 4
temperature_43int1611°CR
368
Temperature 5
temperature_53int1611°CR
369
Temperature 6
temperature_63int1611°CR
370
Temperature 7
temperature_73int1611°CR
371
Temperature 8
temperature_83int1611°CR
372
Temperature 9
temperature_93int1611°CR
373
Temperature 10
temperature_103int1611°CR
374
Temperature 11
temperature_113int1611°CR
375
Temperature 12
temperature_123int1611°CR
376
Temperature 13
temperature_133int1611°CR
377
Temperature 14
temperature_143int1611°CR
378
Temperature 15
temperature_153int1611°CR
379
Temperature 16
temperature_163int1611°CR
380
External positive active energy Ea+ ext
external_positive_active_energy_ea_ext3uint3220.01kWhR
382
External negative active energy Ea- ext
external_negative_active_energy_ea_ext3uint3220.01kWhR
384
External positive reactive energy Er+ ext
external_positive_reactive_energy_er_ext3uint3220.01kvarhR
386
External negative reactive energy Er- ext
external_negative_reactive_energy_er_ext3uint3220.01kvarhR
388
Learnt cooling time constant T2 (49 RMS) thermal rate 1
learnt_cooling_time_constant_t2_49_rms_thermal_rate_13uint1611minR
389
Learnt cooling time constant T2 (49 RMS) thermal rate 2
learnt_cooling_time_constant_t2_49_rms_thermal_rate_23uint1611minR
416
Phase displacement phi0-Sigma
Colonna Access estratta come 'L', quasi certamente refuso di estrazione per 'R' (Read): verificare sul PDF originale pag.168.
phase_displacement_phi0_sigma3int3221°R
418
Phase displacement phi0
Colonna Access estratta come 'L', quasi certamente refuso di estrazione per 'R' (Read): verificare sul PDF originale pag.168.
phase_displacement_phi03int3221°R
420
Phase displacement phi1
Colonna Access estratta come 'L', quasi certamente refuso di estrazione per 'R' (Read): verificare sul PDF originale pag.168.
phase_displacement_phi13int3221°R
422
Phase displacement phi2
Colonna Access estratta come 'L', quasi certamente refuso di estrazione per 'R' (Read): verificare sul PDF originale pag.168.
phase_displacement_phi23int3221°R
424
Phase displacement phi3
Colonna Access estratta come 'L', quasi certamente refuso di estrazione per 'R' (Read): verificare sul PDF originale pag.168.
phase_displacement_phi33int3221°R
592
Time-tagging of the context
DIM=4. Formato 'IEC', definito nel capitolo 'Time-tagging of events', non trascritto in questa estrazione.
time_tagging_of_the_context3string1R
596
Tripping current Itrip1
tripping_current_itrip13uint32210AR
598
Tripping current Itrip2
tripping_current_itrip23uint32210AR
600
Tripping current Itrip3
tripping_current_itrip33uint32210AR
602
Residual current I0 Sum
residual_current_i0_sum3uint32210AR
604
Residual current I0 measured
residual_current_i0_measured3uint32210AR
606
Phase-to-phase voltage U21
phase_to_phase_voltage_u213uint3221VR
608
Phase-to-phase voltage U32
phase_to_phase_voltage_u323uint3221VR
610
Phase-to-phase voltage U13
phase_to_phase_voltage_u133uint3221VR
612
Phase-to-neutral voltage V1
phase_to_neutral_voltage_v13uint3221VR
614
Phase-to-neutral voltage V2
phase_to_neutral_voltage_v23uint3221VR
616
Phase-to-neutral voltage V3
phase_to_neutral_voltage_v33uint3221VR
618
Residual voltage V0
residual_voltage_v03uint3221VR
620
Positive sequence voltage Vd
positive_sequence_voltage_vd3uint3221VR
622
Negative sequence voltage Vi
negative_sequence_voltage_vi3uint3221VR
624
Frequency (tripping context)
frequency_tripping_context3uint322100HzR
626
Active power P
active_power_p3int3221kWR
628
Reactive power Q
reactive_power_q3int3221kvarR
630
Negative-sequence current Ii
negative_sequence_current_ii3uint32210AR
632
Positive-sequence current Id
positive_sequence_current_id3uint32210AR
634
Faulty phase(s)
bit0=fase guasta 1, bit1=fase guasta 2, bit2=fase guasta 3.
faulty_phase_s3bitfield11R
636
Fault location
fault_location3uint3221mR
638
Fault resistance
fault_resistance3uint3221mOhmR
656
Initial value of cumulative breaking current
initial_value_of_cumulative_breaking_current3uint3221kA^2R
658
Cumulative breaking current (0 < I < 2 In)
cumulative_breaking_current_0_i_2_in3uint3221kA^2R
660
Cumulative breaking current (2 In < I < 5 In)
cumulative_breaking_current_2_in_i_5_in3uint3221kA^2R
662
Cumulative breaking current (5 In < I < 10 In)
cumulative_breaking_current_5_in_i_10_in3uint3221kA^2R
664
Cumulative breaking current (10 In < I < 40 In)
cumulative_breaking_current_10_in_i_40_in3uint3221kA^2R
666
Cumulative breaking current (I > 40 In)
cumulative_breaking_current_i_40_in3uint3221kA^2R
668
Cumulative breaking current (totale)
Il nome di questo campo non aveva un qualificatore distintivo nel testo estratto (a differenza delle righe precedenti che specificano una fascia di corrente): interpretato come valore cumulativo totale, da verificare sul PDF originale pag.169.
cumulative_breaking_current_totale3uint3221kA^2R
672
Number of operations (if MES114)
number_of_operations_if_mes1143uint3221R
674
Operating time (with MES114)
operating_time_with_mes1143uint3221msR
676
Charging time (with MES114)
charging_time_with_mes1143uint3221msR
716
Type of application
40="not configured",41="S40",42="S41",43="S42",44="T40",45="T42",46="M41",47="G40",60="S43",61="S50",62="S51",63="S52",64="T50",65="T52",66="S44",67="M40",68="S54",80="S53".
type_of_application3uint1611R
717
Name of application
DIM=6 (12 caratteri ASCII), es. S40/S41/T42...
name_of_application3string1R
723
Sepam marking
DIM=10 (20 caratteri ASCII).
sepam_marking3string1R
733
Sepam application version
DIM=3 (6 caratteri ASCII).
sepam_application_version3string1R
736
Modbus address (slave number) for Level2
modbus_address_slave_number_for_level23uint1611R
737
Modbus address (slave number) for RHM
modbus_address_slave_number_for_rhm3uint1611R
738
Marking + type of equipment
MSB=11h (Sepam serie 40). LSB=configurazione hardware: bit7=selettore Mod.MD(1)/Mod.MX(0); altri bit indicano opzioni installate (Option MD/MX, Extension MET148-2/2, DSM303, MSA141, MET148-2/1, MES114, MES108). Mappatura bit-opzione esatta non chiaramente delimitata nel testo estratto: verificare sul PDF originale pag.169 (tabella nota 3).
marking_type_of_equipment3bitfield11R
739
Type of coupler
0=Modbus.
type_of_coupler3uint1611R
740
Communication version
communication_version3string1R
741
MET148-2 n.1 module version
DIM=3 (6 caratteri ASCII).
met148_2_n_1_module_version3string1R
744
MET148-2 n.2 module version
DIM=3 (6 caratteri ASCII).
met148_2_n_2_module_version3string1R
747
MSA141 module version
DIM=3 (6 caratteri ASCII).
msa141_module_version3string1R
750
DSM303 module version
DIM=3 (6 caratteri ASCII).
dsm303_module_version3string1R
753
Name of language
DIM=10 (20 caratteri ASCII).
name_of_language3string1R
763
Customized language version number
MSB=indice maggiore, LSB=indice minore.
customized_language_version_number3uint1611R
764
English language version number
MSB=indice maggiore, LSB=indice minore.
english_language_version_number3uint1611R
765
Boot version number
MSB=indice maggiore, LSB=indice minore.
boot_version_number3uint1611R
766
Extension word (Configuration)
bit0=1 se modulo MES114E o MES114F Vac configurato.
extension_word_configuration3bitfield11R
3072
Test zone
DIM=16 (0C00-0C0F, bit 0C000-0C0FF). Zona di 16 parole liberamente leggibile/scrivibile per test di comunicazione in fase di messa in servizio. Nessun formato dati specifico, inizializzata a 0.
test_zone3string1R/W

Leggi questi registri via API

curl https://busbabel.vercel.app/api/devices/schneider/sepam-s40/registers?version=v1